Xinglu Wang: h-index, Total Citations, and Citation Map
Xinglu Wang's h-index is 10 (11 i10-index, 299+ total citations across 19+ publications) according to Google Scholar as of May 2026. Xinglu Wang is affiliated with Intel Corporation.
Xinglu Wang is a researcher affiliated with Intel Corporation, specializing in Advanced Electronic Materials and Devices. Their work has been cited 299 times. This profile visualizes their global influence, highlighting strong citation networks in China.
Xinglu Wang's Citation Metrics
Bibliometric impact based on 19 indexed publications.
- H-Index
- 10
- i10-Index
- 11
- Total Citations
- 299
- Citing Countries
- 28
As of May 2026.
Xinglu Wang has an h-index of 10 and 299 total citations across 19 publications, with research cited by institutions in 28 countries.
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Top Cited Works
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Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts
202448
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Top Citing Institutions
Visa Evidence Package
Views and exports tuned for EB-1A, O-1A, and EB-2 NIW petitions. Sustained acclaim, geographic reach, and independent-citation filtering are the strongest evidence categories immigration adjudicators look for.
Significant Contributions
Auto-detected research lines — a seminal paper and the follow-up work building on it. Review and edit before using in a petition. Each Free PDF opens in a new tab — EB-1A organises this into the structure USCIS applies to Criterion 5 of 8 CFR § 204.5(h)(3)(v); EB-1B re-frames it under § 204.5(i)(3) (outstanding researcher); NIW presents it under prong 2 of Matter of Dhanasar.
155 citing papers could not be classified (no author data) — excluded from the percentages above.
The researcher established foundational insights into interface chemistry and band alignment for metal contacts on MoS2, enabling subsequent advances in low-resistance, CMOS-compatible device engineering.
The researcher advanced interface chemistry analysis of semiconductor stacks using synchrotron photoemission spectroscopy, establishing methods for studying annealing effects and Fermi level pinning mechanisms.
The researcher established precise band alignment parameters for indium–gallium–zinc oxide/β-Ga2O3 heterojunctions using angle-resolved X-ray photoelectron spectroscopy, providing critical data for oxide semiconductor device engineering.
Citation trend (last 10 years)Click to expand
Citation Trend (Last 10 Years)
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